Samsung to present GDDR4 at 2 GHz

At ICSS, Samsung presented a GDDR4 memory chip which I/O run at 2 GHz with 2V. Thanks to these characteristics, the external DDR bus speed reaches 4 Gbits per second and per pins. Memory cells are clocked at 500 MHz as GDDR4 is of 8n bit type like the DDR3.
Knowing that these chips have 32 pins for data transfers, the total is 16 GB/s. This is two times better than the GDDR4 of the X1950 XT, and 42% better than the faster current GDDR4 of Samsung.